AREA OF INTEREST AND SPECIALISATION (INCLUDING RESEARCH AREA)

Semiconductor nanostructure, Resistive Random Access Memory, Science, High-k for CMOS Technology.

SUBJECTS TAUGHT (INCLUDING SUBJECTS CURRENTLY TEACHING)

International Conferences

3. N. Roy & A. Roy et al Optical Characteristics of Pulsed Laser Deposited Ba0.8Sr0.2TiO3 Thin Films Grown on Fused Quartz Substrate AIP Conference Proceeding 1451, 139 (2012); doi: 10.1063/1.4732393

1. A. Roy et al Temperature dependent leakage current behavior of pulsed laser ablated SrBi2Ta2O9 thin films Journal of Applied Physics Pp.44103–44108 Vol. 105, No.4, 2009
2. A. Roy et al Interfacial and electrical properties of SrBi2Ta2O9/ZrO2/Si heterostructures for ferroelectric memory devices, Journal of Applied Physics pp. 64103–64108 Vol. 104, No.6, 2008
3. A. Roy et al Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2 as buffer layer, J. Phys.D: Appl. Phys.pp. 95408–95416 Vol. 41, No. 9, 2008
4. B. Panda A. Roy et al Thickness and temperature dependent electrical characteristics of crystalline BaxSr1-x TiO3 thin films, Journal of Applied Physics pp. 64116–64123 Vol. 101, No.6, 2007
5. A. Roy et al Characteristics of Strontium Bismuth Tantalate Film with ZrO2 buffer Layer for Non-Volatile Memory Application Integrated Ferroelectrics Pp.119-124, Vol.124, Issue no.1 2011.
6. Incorporation of SnO 2 nanoparticles in PMMA for performance enhancement of a transparent organic resistive memory device PK Sarkar, S Bhattacharjee, M Prajapat, A Roy RSC Advances 5 (128), 105661-105667
7. Observation of negative differential resistance and electrical bi-stability in chemically synthesized ZnO nanorods N Roy, A Chowdhury, A Roy Journal of Applied Physics.
8. 10 2014 Zinc vacancy mediated structural phase transition and photoluminescence in nanocrystalline ZnS thin films N Roy, A Roy Journal of Materials Science: Materials in Electronics
9. Improvement of Reliability of Polymer Nanocomposite Based Transparent Memory Device by Oxygen Vacancy Rich ZnO Nanorods S Bhattacharjee, PK Sarkar, N Roy, A Roy Microelectronic Engineering.
10. Morphological, Optical, and Raman Characteristics of ZnO Nanoflowers on ZnO-Seeded Si Substrates Synthesized by Chemical Method N Roy, A Chowdhury, T Paul, A Roy Journal of Nanoscience and Nanotechnology 16 (9), 9738-9745.
11. Interfacial and electrical properties of radio frequency sputtered ultra-thin TiO2 film for gate oxide applications M Nath, A Roy Journal of Materials Science: Materials in Electronics 26 (11), 9107-9116.
12. Multilevel resistance state of Cu/La2O3/Pt forming-free switching devices PK Sarkar, M Prajapat, A Barman, S Bhattacharjee, A Roy Journal of Materials Science 51 (9), 4411-4418.
13. Multilevel programming in Cu/NiO y/NiO x/Pt unipolar resistive switching devices PK Sarkar, S Bhattacharjee, A Barman, A Kanjilal, A Roy Nanotechnology 27 (43), 435701.
14. Probing electron density across Ar+ irradiation-induced self-organized TiO2− x nanochannels for memory application A Barman, CP Saini, PK Sarkar, A Roy, B Satpati, D Kanjilal, SK Ghosh, ... Applied Physics Letters 108 (24), 244104.
15. Electrical Reliability, Multilevel Data Storage and Mechanical Stability of MoS2-PMMA Nanocomposite Based Non-volatile Memory Device S Bhattacharjee, P Sarkar, M Prajapat, A Roy Journal of Physics D: Applied Physics.